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Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors

Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices. Read more Read less. Amazon Global Store US International products have separate terms, are sold from abroad and may differ from local products, including fit, age ratings, and language of product, labeling or instructions.

Manufacturer warranty may not apply Learn more about Amazon Global Store. From the Back Cover Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers.

Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also: Treat strain physics at both the qualitative overview level as well as provide detailed fundamentals Explain strain physics relevant to logic devices as well as strain-based MEMS This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. No customer reviews. Share your thoughts with other customers. Write a customer review. Discover the best of shopping and entertainment with Amazon Prime.

Prime members enjoy FREE Delivery on millions of eligible domestic and international items, in addition to exclusive access to movies, TV shows, and more. Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy. B 83 , Mills, D.

Download Strain Effect In Semiconductors Theory And Device Applications

Light Scattering in Solids —Paris Burstein, E. Interband electronic Raman scattering in semimetals and semiconductors. B 4 , — Observing and measuring strain in nanostructures and devices with transmission electron microscopy. Wie, C. High resolution X-ray diffraction characterization of semiconductor structures. R 13 , 1—56 Holt, M. Strain imaging of nanoscale semiconductor heterostructures with X-Ray Bragg projection ptychography.

Mooney, P. De Wolf, I. Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits. Kaleli, B.

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Thin Solid Films , 57—61 Moutanabbir, O. UV-Raman imaging of the in-plane strain in single ultrathin strained silicon-on-insulator patterned structure. Wong, T.

Adams, J. Demonstration of multiple substrate reuses for inverted metamorphic solar cells. IEEE J. Guidotti, D.

Electronic Raman scattering and antiresonance behavior in highly stressed photoexcited silicon. Olego, D. Intra- and inter-valence-band electronic Raman scattering in heavily doped p-GaAs. B 22 , — Nazvanova, E.

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Inter-valence-band electronic Raman scattering due to photoexcited holes in Ge1- x Si x. B 62 , — Enderlein, R. Theory of interband resonance Raman scattering in small- gap semiconductors. State Solid B 70 , — Shen, H. Richter, W. Resonant Raman scattering in semiconductors. Springer Tracts Mod. Perkins, J. Madelung, O. Semiconductors — Basic Data 2nd revised Edition Springer Beausoleil, R. Large scale integrated photonics for twenty-first century information technologies.

Kuhn, K. Process technology variation. IEEE Trans. Devices 58 , — Irmer, G. Micro-Raman study of strain fields around dislocations in GaAs. State Solid A , — Leite, M. Wafer-scale strain engineering of ultrathin semiconductor crystalline layers. Falub, C. Scaling hetero-epitaxy from layers to three-dimensional crystals. Science , — Bir, G. Download references. This work was partially performed at the Center for Integrated Nanotechnologies, which is a user facility of the U. Sandia National Laboratories is a multi-program laboratory that is managed and operated by Sandia Corporation, which is an entirely owned subsidiary of Lockheed Martin Corporation, for the U.

The dilute nitride samples were provided by A. Ptak as part of a previous BES project. Correspondence to Brian Fluegel or Angelo Mascarenhas. This work is licensed under a Creative Commons Attribution 4. Reprints and Permissions. New Journal of Chemistry Applied Surface Science Scientific Reports Physical Review B Journal of Applied Physics By submitting a comment you agree to abide by our Terms and Community Guidelines.

If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate. Advanced search. Skip to main content. Subjects Applied physics Electrical and electronic engineering Photonic devices Semiconductors. Abstract Semiconductor strain engineering has become a critical feature of high-performance electronics because of the significant device performance enhancements that it enables.

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Introduction The effect of strain on the electronic, optical and vibrational properties of semiconductors is currently used for engineering advanced electronic and photonic devices. Figure 1: Raman spectrum overview. Full size image. Figure 2: Energy of the low-frequency mode versus the theoretically predicted strain-induced valence-band splitting. Figure 3: Resonance Raman profile and frequency dispersion of the low-frequency mode. Discussion A key limitation in high-spatial-resolution Raman spectroscopy is that, when the laser probe size is decreased, the required power density to maintain reasonable Raman scattering intensities becomes sufficiently high to cause local heating effects.

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Methods Growth The set of 0. Strain estimate The accepted values for the lattice constants for GaAs 5. Additional information How to cite this article: Fluegel, B. References 1 Riel, H. Article Google Scholar 3 Liang, D. Article Google Scholar 5 Logothetidis, S. Article Google Scholar 11 Wie, C. Article Google Scholar 12 Holt, M. Article Google Scholar 19 Guidotti, D.

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Author information Author notes Aleksej V. Ethics declarations Competing interests The authors declare no competing financial interests. Rights and permissions This work is licensed under a Creative Commons Attribution 4. About this article. Further reading Electrochemically synthesized faceted CuInTe2 nanorods as an electron source for field emission applications Manorama G.